BURIED WORDLINE PDF

Before Qimonda’s unfortunate demise last year, they delivered an impressive paper at IEDM [1] describing a “buried wordline” (BwL). Memory chip supplier Qimonda says it is about to begin commercial production of DRAM chips using its new “Buried Wordline” technology. Provided are a semiconductor device having a buried word line structure in which a gate electrode and a word line may be buried within a substrate to reduce.

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The gate electrode layer may be formed so as to bburied a thickness within a range of about 1 to about 10 nm, for example, below 5 nm. In example embodiments, forming the buried word line may include forming a lower buried word line in a lower region of the gate electrode layer and forming an upper buried word line in an upper region of the gate electrode layer, the upper buried word line being burier of a material different from that of the lower buried word line.

Semiconductor device including a metal gate electrode formed in a trench and method of forming thereof. Semiconductor integrated circuit device capable of securing gate performance and channel length.

As such, when the gate electrode and the word line are formed of only titanium nitride Tinthere may be an increase in leakage current. The size of the recessed region of the gate insulating layerthe gate electrode layerand the buried word line may be equal to or maybe different from each other.

A gate insulating layer 16 is disposed on the bottom surface and the inner surface of the trench Accordingly, when buied gate electrode layer includes polysilicon and is formed to a thickness of about 5 nm, the atomic layer deposition may be carried out using the Si 3 H 8 gas. One or more recess channels may be formed, and accordingly a plurality of trenches may be formed within the active region defined by the device isolation layer The buried word line may be formed by recessing the polished word line layer into the substrate using a partial etch process.

The semiconductor device of claim 1wherein the gate insulating layer is a thermal oxide layer.

‘Buried Wordline’ DRAM becomes reality

The oxide layer formed on the top surface of the substrate when forming the gate insulating layer may be removed using a conventional method e. The Qimonda slide below shows the difference in structure; on the left is the buried wordline in redsunk into the substrate silicon, and on the right is an oriental competitor using a spherical recess-channel transistor with the tungsten part of the gate highlighted in red.

Non-volatile semiconductor memory device having vertical transistors with the floating and control gates in a trench and fabrication method therefor.

The forming of the buried word line may comprise forming a word line layer on the substrate so as to bury the trench, polishing the word line layer using chemical mechanical polishing CMP and an etch-back method which uses a dry etch to expose the surface of the substrate, and recessing the polished word line layer into the substrate.

In example embodiments, the buried word line may include any one selected from the group consisting of tungsten Waluminum Alcupper Cumolybdenum Motitanium Titantalum Taand ruthenium Ruor a combination thereof. Comments won’t automatically be posted to your social media accounts unless you select to share.

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As such, the degradation of the oxide layer, which may be caused by the formation of the titanium nitride layer, may be reduced or prevented. The top surfaces of the gate insulating layerthe gate electrode layerand the buried word line formed on the gate electrode layer may be formed so as to not protrude beyond the top surface of the substratee.

Therefore, in the above structure, the semiconductor device having a height corresponding to the protruded portion of the metal gate electrode 20 is formed. The trench may be formed so as to have a width within a range of about 10 to about nm, for example, below 50 nm. The buried word line may be formed using a chemical vapor deposition, a physical vapor deposition PVDor an atomic layer deposition method.

wirdline The semiconductor device having the buried metal gate electrode structure having a low resistance and a method of manufacturing the same. However, example embodiments are not limited to the embodiments illustrated hereinafter, and the embodiments herein are rather byried to provide easy and complete understanding of the scope and spirit of example embodiments.

Semiconductor memory devices including vertically oriented transistors and methods of manufacturing such devices. The lower buried word line may be formed of polysilicon.

Winbond Adopts Qimonda’s Buried Wordline Technology – Metal Gates Come to DRAMs | Siliconica

The upper buried word line may be formed of a different material from that of the lower buried word line Therefore, it is to be understood that the foregoing is illustrative of example embodiments and is not to be construed as limited to the specific embodiments disclosed, and that modifications to the disclosed embodiments, as well as other embodiments, are intended to be included within the scope of the appended claims.

Reference will now be made in detail to example embodiments, examples of which are illustrated in the accompanying drawings. As a result, reliability of the device is reduced. Furthermore, because the lower buried word line may be formed of polysilicon, a reduction of the aspect ratio is obtained.

6F2 buried wordline DRAM cell for 40nm and beyond – Semantic Scholar

A method of fabricating a semiconductor device having a buried word line structure may comprise forming a device isolation layer defining an active region in a semiconductor substrate, forming a trench for forming one or more recess channels in the active region, forming a gate insulating layer on the surface of the trench, forming a gate electrode layer on the surface of the gate insulating layer, and forming a buried word line burying the trench bufied the surface of the gate electrode layer.

As such, the deposition of the metal that forms the upper buried word line may be performed more easily. In example embodiments, forming of the buried word line may include forming a word line layer on the substrate so as to bury the trench, polishing the word line layer using chemical woedline polishing CMP and an etch-back method which uses a dry etch to expose the surface of the substrate, and recessing the polished word line layer into the substrate. The semiconductor device of claim 1wherein the lower buried word line includes polysilicon.

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6F2 buried wordline DRAM cell for 40nm and beyond

Semiconductor having buried word line cell structure and a method of fabricating the same. The upper buried word line may be formed by forming a second word line layer not shown on the substrate so as to bury the trench including the lower buried word line The degradation of the oxide layers due to bueied occurrence of chlorine ions from applying the TiN layer, owrdline is formed using a CVD or an atomic layer deposition ALD method, is one of the causes of the problems described above.

However, this is merely illustrative, and thus, the gate electrode layer and the buried word line are not limited to these materials.

Accordingly, all such modifications are intended to be included within the scope of the claims. Winbond has introduced the technology at the nm node, but they also wirdline nm parts under development.

Unless otherwise defined, all terms including technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which example embodiments belong.

In example embodiments, forming the lower buried word line may include forming a first word line layer on the substrate so as to bury the trench, polishing the first word line layer using chemical mechanical polishing and an etch-back method which uses a dry etch to expose the surface of the substrate, and recessing the polished first word line layer into the substrate to form the lower buried word line.

M Year of fee nuried However, when the width of the trench is less than about 50 burued, there may be a constraint that the thickness of the polysilicon layer be no more than about 5 nm. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of example embodiments.

Provided are a semiconductor device having a buried word line structure in which a gate electrode and a word line may be buried within a substrate to reduce the height of the semiconductor device and to reduce the degradation of the oxide layer caused by chlorine ions from wofdline application of a Aordline metal gate, and a method of fabricating the semiconductor device.

The upper buried word line may comprise a silicide. The buried word line may comprise any one selected from the group consisting of tungsten Waluminum Al bufied, cupper Cumolybdenum Moburide Titantalum Taand ruthenium Ruor a combination thereof. The buried word line may be formed using a chemical vapor deposition, a physical vapor deposition PVDor an atomic layer deposition ALD method. The semiconductor device may comprise a semiconductor substrate defined by a device isolation layer and comprising an active region including a trench and one or more recess channels, a gate isolation layer on the surface of the trench, a gate electrode layer on the surface of the gate isolation layer, and a word line by which the trench wordlkne be buried on the surface of the gate electrode layer.